WHy 0.13um leakage current is large then 0.18um ?

[billjoe]

If the same circuit ( EX: Inverter) , but different process
Q1 :
WHy 0.13um leakage current is large then 0.18um ?

Q2 Any relationship about leakage ( formula) that can caompre 0.18 vs 0.13
leakage current?

 

[winsonpku]

Re: Q : Leakage current?

Q1:I thinks the leakage current is mostly determined by the channel length, commonly channel length in 0.13um is samller than the counterpart of 0.18
Q2:this is a hard work if someone want to do this simulation

BTW:You can do some simulations about the leakage current, then you will be clear.

If the same circuit ( EX: Inverter) , but different process
Q1 :
WHy 0.13um leakage current is large then 0.18um ?

Q2 Any relationship about leakage ( formula) that can caompre 0.18 vs 0.13
leakage current?

 

[renwl]

Re: Q : Leakage current?

you can get the leakage current data from foundry.

 

[safwatonline]

Q : Leakage current?

decreasing the gate oxide thickness in lower technologies cause more leakage i think it was by FN mechanism, unless some high -k dielectric is used (to prevent low thickness)

 

[shaikhsarfraz]

Re: Q : Leakage current?

hi,
The leakage current in the simplest form is given as

Ileak is directly proportional to β*(Vt)².

The W/L ratio of .13um technology is smaller than that of .18um technology.

thanks
sarfraz

 

[Areky_qin]

Re: Q : Leakage current?

Q1 :
WHy 0.13um leakage current is large then 0.18um ?

How leakage happened? that's means drain or source to bulk, gate can not lead leakage, so oxide thickness can not determine the leakage number. .13 process have less design rule, that's means the isolation layer and space is smaller than 0.18 process, if the isolation is not working well, then leakage is more large. The other hand, .13 and .18 process have difference doping depth, that's means the pn junction is difference, and with the larger area of active area, so the leakage is more large.

Q2 Any relationship about leakage ( formula) that can caompre 0.18 vs 0.13
leakage current?

the model is supplied by fab, so the simution result can not get the more useful information. Have to compare the test key test data, those data can be get from fab.

 

[safwatonline]

Re: Q : Leakage current?

Q1 :
WHy 0.13um leakage current is large then 0.18um ?

How leakage happened? that's means drain or source to bulk, gate can not lead leakage, so oxide thickness can not determine the leakage number. .13 process have less design rule, that's means the isolation layer and space is smaller than 0.18 process, if the isolation is not working well, then leakage is more large. The other hand, .13 and .18 process have difference doping depth, that's means the pn junction is difference, and with the larger area of active area, so the leakage is more large.

Hello,
leakage is by definition the current passing through a dielectric material which is the gate oxide in case of MOSFET.
current leak through the gate by two mechanisms:
1-FN "fowler-Nordheim" which means the leakage happens at higher Voltage due to band bendig
2-Direct mechanism which happens in small oxide thickness which leads to tunneling effect, which is why 0.13 leak more cause it has lower oxide thickness.
regards

 

[its_thepip]

Re: Q : Leakage current?

As we go from 0.18um to 0.13um , the channel length go on decreases. So the short channel effect increases and sub threshold current in the mosfet increases.
here the magic is that the mosfet can be used as an amplifier using this subthreshold current.