Well capacitance is directly proportion to oxide thickness of MOS and cap between the metal layers. it is simple answer it is 90nm will offer you more cap. On the other hand cap is not the most important criterion, it is the speed of the device which is dependent on voltage, size of the routes etc. As you see the speeds have been increasing so less cap to charge and discharge.
Well capacitance is directly proportion to oxide thickness of MOS and cap between the metal layers. it is simple answer it is 90nm will offer you more cap. On the other hand cap is not the most important criterion, it is the speed of the device which is dependent on voltage, size of the routes etc. As you see the speeds have been increasing so less cap to charge and discharge.
The capacitance is actually inversely proportional to the oxide thickness. C= ξA/d where d= distance between the plates. So, as the thickness of oxide goes on decreasing, the distance between the gate and substrate reduces and cap goes up.