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smith123,
For a bipolar transistor, it is essentially the collector current that flows with no base drive current supplied.
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Icbo is the collector current that flows with the base open
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Iceo is the collector current that flows with the emitter open
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Icer is the collector current that flows with a specified resistance connected from base to emitter
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Icex is the collector current that flows with a specified revrse bias voltage applied between base and emitter.
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Ice(sus) is the collector current that flows at a specified Vce when the collector-emitter diode breaks down (Avalanche mode).
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Icer, Icex, Ic(sus) ratings are not used much anymore.
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For a FET it is the gate current
I bet you get a lot of replies to this question. My view would be .
Take a standard class a amplifier and remove the forward bias from it (base current). Then measure the current flowing through the collector the current that you measure would be the leakage current.( current that flows when the device is not being used).
The leakage current is different from normal reverse saturation currents of a junction. It is majorly caused by traps in bulks and surfaces especially of the depletion region.
The transistors have majority carriers and minority carriers.
the forward current is due to the majority carries while the leackage current is due to the minority carriers.
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