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As far as I know, vertical BJTs are used in high current applications since the current density is limited to a certain number and to increase to amount of current passing through the transistor, vertical BJTs are used which means that the collector is above the emitter and not next to it as in lateral BJTs.
In a lateral device, electron flows "laterally" from the emitter to the collector. The base width is define by photolithography therefore beta and ft for these device are poor. In addition, the base resistance is high because connection to the active base in made laterally through a long p-region.
In a verticle device, electron flow downward or vertically from the emitter to the collector. The base is defined by profile engineering of the emitter/base/collector diffusion/implant regions. Thus beta and ft are much higher for these devices, and they also exhibit lower base resistance from their lateral counterparts.
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