Hi all,
Can u tell me anybody of, what will be the problem if i use 100fF instead of 250fF parasitic capacitance at the input stage which is paralal with the bondwire inductor?
in low freqency, smaller parasitic capacitance will not cause problem. but if you are dealing with RF circuit, impedance matching is crucial. so you should be very careful to adjust the capacitance.
Actually my dear friend,I want to enhance my band width by using pmos at the input stage.I increased upto 4Ghz,but my desired bandwidth is 10Ghz,60 dbΩ.I used .13µm BICMOS teachnology.
Would u help me, plz?