What happen if we connect metal to N-well directly without any n diffusion

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Depending on NWell surface concentration you may have
a Schottky contact instead of ohmic. Or not. The foundry
has probably preferred not to look too closely at this if
the flow is "just CMOS". You could perhaps dig up the
NWell doping, make an assumption about surface vs bulk
concentration and then refer that to the literature about
how doping determines Schottky vs marginal vs ohmic
contact attribute results.
 

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