SDRAM is divided into banks, each bank into rows and each row into columns. What determines how many rows will be there in an SDRAM?
Is there a formula used to go from a single memory location address to generate three addresses of bank, row and column?
It can be very important. DRAM can be very slow when switching from row to row. But reading across banks and within a row incurs little/no turnaround penalty. So if you can, it is best to design your logic with this knowledge.