If you want to use N-type MOSFET in the top of the H-bridge, you have to provide a higher voltage in the gates quite higher than in the sources (you want to set the MOSFET in the triode zone with a resistance as small as possible).
For that, you can build a charge pump or use an IC as suggested.
You can also use P-channel mosfet on the top row. This is OK for low to medium power. For hi power, N-channel MOSFET are preferred because they have slightly faster switching and less heat losses.