hanikapa
Member level 4
Hello,
I simulated a thick oxide pmos varactor which the gate is connected to 500mv. For the C-V curve, the tick oxide has a linear characteristic. But for a thin oxide varactor, the capacitance value till vsg<0, is constant.
does anybody know that why for the thick oxide one the capacitance is not constant while vsg<0?
I simulated a thick oxide pmos varactor which the gate is connected to 500mv. For the C-V curve, the tick oxide has a linear characteristic. But for a thin oxide varactor, the capacitance value till vsg<0, is constant.
does anybody know that why for the thick oxide one the capacitance is not constant while vsg<0?
