dipnirvana
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Hi, all,
i have doubt which i didn't had earlier
. Any way for one of my application i need to design gate driver of IGBT IKW60N60H3 (data sheet attached) . Drain current is 30A, drain voltage is 400VAC. now we have requirement of turning on the IGBT in 50ns ..yes that fast. Now if i go by my old way of calculation which says that Gate charge /time is equal to gate current.
So in this case gate charge is 375nC and time is 50nS. So gate current required is 375/50= 7.5 A . Now confusion is there because of the graph in datasheet , i am referring to figure 10.in that at Rg=6 ohm , td(on)+tr = 50ns . So in effect there is huge difference of current requirement . that is through this graph only 2.5 A is sufficient to turn on the IGBT in 50nS. Please note that in my case Vg =0 --> 15V.
Please help to clear the cloud.
i have doubt which i didn't had earlier
. Any way for one of my application i need to design gate driver of IGBT IKW60N60H3 (data sheet attached) . Drain current is 30A, drain voltage is 400VAC. now we have requirement of turning on the IGBT in 50ns ..yes that fast. Now if i go by my old way of calculation which says that Gate charge /time is equal to gate current. So in this case gate charge is 375nC and time is 50nS. So gate current required is 375/50= 7.5 A . Now confusion is there because of the graph in datasheet , i am referring to figure 10.in that at Rg=6 ohm , td(on)+tr = 50ns . So in effect there is huge difference of current requirement . that is through this graph only 2.5 A is sufficient to turn on the IGBT in 50nS. Please note that in my case Vg =0 --> 15V.
Please help to clear the cloud.
