nekoneko
Newbie level 1
My problem is when i using threshold voltage adjust implantation i.e. boron implanted into the p-type substrate,
the observation vth is increases but the subthreshold leakage current also increases not decreases , why ?
Can help explain the clear concept...
Thanks
the observation vth is increases but the subthreshold leakage current also increases not decreases , why ?
Can help explain the clear concept...
Thanks