refugee
Member level 1
hi guys,
i have some doubts about esd, would you plz be so kind to help me out.
1. which one is more sensitive to esd? oxide or diffusion
2. why we need to protect the drain of nmos to vin, but not the source of pmos?
3. when using ggnmos, suppose there is an zap from input pin to ground, which mechanic is occurred? does parasitic bjt of the nmos discharge the esd charge or the nmos has been turned on? ( because we usually add a resistor between the gate and ground)
i have some doubts about esd, would you plz be so kind to help me out.
1. which one is more sensitive to esd? oxide or diffusion
2. why we need to protect the drain of nmos to vin, but not the source of pmos?
3. when using ggnmos, suppose there is an zap from input pin to ground, which mechanic is occurred? does parasitic bjt of the nmos discharge the esd charge or the nmos has been turned on? ( because we usually add a resistor between the gate and ground)