There are MOSFET gate drivers that achieve tens of nS driving 1000 - 2000 pF,
but your board must have both bulk and ceramic, several 1000x in C load I think.
I guess that was a little cryptic.
On your board you must have both bulk C, like tantalums, uF range, in parallel with ceramic
C, typically .01 or .1 uF.
MOSFET gate drivers are ICs design to drive a lot of C load rapidly, as MOSFETs have
a lot of gate C, ranging from 100's of pF to a couple thousand pF. These drivers have
high peak current capability, for short periods of time, just the thing for fast Tr and Tf
times. But your board does have more than a couple of thousand pf typically, so not
sure how these drivers would handle that, eg. could they produce uS of Tr and Tf with
uF kinds of loads ? Look at some gate driver datasheets, use the selector tools at Digikey,
look at parts .= 10A drive current. I see parts, for 100K pF, that can do fall times ~ 300 nS, so
look at typical graphs to see what higher C performance looks like.
Regards, Dana.