loves86137
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Be a postgraduate student, I study on the design of sub-threshold SRAM now. The papers I have been collecting are all emphasize how to increase the stable of SRAM Cell. Such as write noise margin、read noise margin and so on. However, there are no references show how these periphery circuits (ex. column decoder, read buffer……and so on.) are designed in the sub-threshold region.
I know CMOS logic circuit works in the sub-threshold region will lead to much longer time to rise or fall, and this delay might cause SRAM work failure. Above problem has been tormenting me for weeks, therefore I hope to get helps. Are there anyone who masters or works in this field could give me some advices or information? Thank you!!
I know CMOS logic circuit works in the sub-threshold region will lead to much longer time to rise or fall, and this delay might cause SRAM work failure. Above problem has been tormenting me for weeks, therefore I hope to get helps. Are there anyone who masters or works in this field could give me some advices or information? Thank you!!