simulation of gate induced drain leakage for MOSFET in silvaco tcad

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ANNA17

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HI ALL
i am simulating GIDL current in MOSFETs and trying to control it by changing the gate workfunction. can you please help me in suggesting which model is appropriate for simulating GIDL current and further how can i change the gate workfunction.
 

In atlas

contact name=gate workfun=3.3 (this is the absolute value of the work function not relative to silicon)
 

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