Hi everyone! I'm just trying to learn how to user the Silvaco TCAD and I have a point, that I can't understand. I'm using the following directives to create a structure and implant an impurity:
Then I'm open the structure in the Tony Plot and use a cutline to see the allocation profile. On the allocation profile, we can see that impurity concentration is decreasing with increasing the depth, but for some reason when impurity concentration becomes equal to 10^5 cm^-3 (concentration of Boron after ~0.55 mkm depth), it starts to be constant with increasing of the depth. And I can't understand why, because from the technology's point of view impurity concentration must decreasing, not being constant. Could someone explain it? Thank you in advance!
go athena # GRID line x loc=0.00 spac=0.10 line x loc=1 spac=0.10 line y loc=0.00 spac=0.001 line y loc=1 spac=0.001 # SUBSTRATE init silicon c.arsenic=2.3e15 orientation=100 two.d # IMPLANT implant boron dose=3.2e15 energy=125 tilt=0 rotation=0 crystal # extract name="zad2xj" xj material="Silicon" mat.occno=1 x.val=0.5 datafile="zad2" junc.occno=1 STRUCTURE OUTFILE=zad2.str
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