[SOLVED] SilVACO ATLAS 3d NVM simulation

[S.B.Jeon]

Hi
I'm trying 3D SONOS NVM simulation with ATLAS tool.

I confirmed that SONOS NVM can be simulated well using ATLAS.
In the code, 'nitridecharge' statement defines trap density, capture cross section and so on.
This statement works in 2D Simulation, but in 3D, it shows warning like below and dosen't work,

" This statement is not in the correct place in the input deck.
Please check the tutorial section of the manual 83 "

Here is my code. Please help T T

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Code PHP - [expand]
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go atlas
 
mesh space.mult=2 three.d
 
 
 
# Define variables
 
set lg = 0.2
set wfin = 0.05
set tox1 = 0.002
set tox2 = 0.008
set tox3 = 0.01
set hfin = 0.055
set hgate = 0.02
set wgate = 0.02
set hbox = 0.05
set delec = 0.02
set lds = 0.05
 
 
 
# Define mesh
 
x.mesh loc=0  spac=0.005
x.mesh loc=$wgate  spac=0.002
x.mesh loc=$wgate+$tox3  spac=0.002
x.mesh loc=$wgate+$tox3+0.5*$wfin  spac=0.004
x.mesh loc=$wgate+$tox3+$wfin  spac=0.002
x.mesh loc=$wgate+2*$tox3+$wfin  spac=0.002
x.mesh loc=2*$wgate+2*$tox3+$wfin  spac=0.005
 
y.mesh loc=0  spac=0.005
y.mesh loc=$delec  spac=0.005
y.mesh loc=$lds  spac=0.002
y.mesh loc=$lds+0.5*$lg  spac=0.007
y.mesh loc=$lds+$lg  spac=0.002
y.mesh loc=2*$lds+$lg-$delec  spac=0.005
y.mesh loc=2*$lds+$lg   spac=0.005
 
z.mesh loc=-$hbox spac=0.02
z.mesh loc=-$hbox/2 spac=0.01
z.mesh loc=0 spac=0.005
z.mesh loc=$tox3  spac=0.002
z.mesh loc=0.5*$hfin  spac=0.005
z.mesh loc=$hfin  spac=0.001
z.mesh loc=$hfin+$tox1  spac=0.0005
z.mesh loc=$hfin+$tox1+$tox2  spac=0.0005
z.mesh loc=$hfin+$tox1+$tox2+$tox3  spac=0.001
z.mesh loc=$hfin+$tox1+$tox2+$tox3+$hgate/5   spac=0.005
z.mesh loc=$hfin+$tox1+$tox2+$tox3+$hgate   spac=0.005
 
 
 
 
# Define region
 
region number=1 material=air
 
# Fin/BOX
region number=2 x.min=$wgate+$tox3 x.max=$wgate+$tox3+$wfin z.min=0 z.max=$hfin material=silicon
region number=3 z.min=-$hbox z.max=0 material=oxide
 
# gate dielectric
region number=4 x.min=0 x.max=$wgate y.min=$lds y.max=$lds+$lg z.min=0 z.max=$tox3 material=oxide
region number=4 x.min=$wgate+$wfin+2*$tox3 x.max=2*$wgate+$wfin+2*$tox3 y.min=$lds y.max=$lds+$lg z.min=0 z.max=$tox3 material=oxide
region number=4 x.min=$wgate x.max=$wgate+$tox3 y.min=$lds y.max=$lds+$lg z.min=0 z.max=$hfin+$tox1+$tox2+$tox3 material=oxide
region number=4 x.min=$wgate+$tox3+$wfin x.max=$wgate+2*$tox3+$wfin y.min=$lds y.max=$lds+$lg z.min=0 z.max=$hfin+$tox1+$tox2+$tox3 material=oxide
region number=4 x.min=$wgate+$tox3 x.max=$wgate+$tox3+$wfin y.min=$lds y.max=$lds+$lg z.min=$hfin z.max=$hfin+$tox1 material=oxide
region number=4 x.min=$wgate+$tox3 x.max=$wgate+$tox3+$wfin y.min=$lds y.max=$lds+$lg z.min=$hfin+$tox1+$tox2 z.max=$hfin+$tox1+$tox2+$tox3 material=oxide
 
region number=5 x.min=$wgate+$tox3 x.max=$wgate+$tox3+$wfin y.min=$lds y.max=$lds+$lg z.min=$hfin+$tox1 z.max=$hfin+$tox1+$tox2 material=nitride
 
 
# gate
region number=6 x.min=0 x.max=$wgate y.min=$lds y.max=$lds+$lg z.min=$tox3 z.max=$hfin+$tox1+$tox2+$tox3+$hgate material= polysilicon
region number=6 x.min=$wgate+$wfin+2*$tox3 x.max=2*$wgate+$wfin+2*$tox3 y.min=$lds y.max=$lds+$lg z.min=$tox3 z.max=$hfin+$tox1+$tox2+$tox3+$hgate material= polysilicon
region number=6 x.min=$wgate x.max=$wgate+2*$tox3+$wfin y.min=$lds y.max=$lds+$lg z.min=$hfin+$tox1+$tox2+$tox3 z.max=$hfin+$tox1+$tox2+$tox3+$hgate material=polysilicon
 
 
 
 
# Define electrode
 
electrode name=gate x.min=$wgate+2*$tox3+$wfin x.max=2*$wgate+2*$tox3+$wfin y.min=$lds y.max=$lds+$lg z.min=$tox3 z.max=$hfin+$tox1+$tox2+$tox3
electrode name=gate2 x.min=0 x.max=2*$wgate+2*$tox3+$wfin y.min=$lds y.max=$lds+$lg z.min=$hfin+$tox1+$tox2+$tox3 z.max=$hfin+$tox1+$tox2+$tox3+$hgate
electrode name=gate3 x.min=0 x.max=$wgate y.min=$lds y.max=$lds+$lg z.min=$tox3 z.max=$hfin+$tox1+$tox2+$tox3
 
electrode name=source x.min=$wgate+$tox3 x.max=$wgate+$tox3+$wfin y.min=0 y.max=$delec z.min=0 z.max=$hfin
electrode name=drain x.min=$wgate+$tox3 x.max=$wgate+$tox3+$wfin y.min=2*$lds+$lg-$delec y.max=2*$lds+$lg z.min=0 z.max=$hfin
#electrode name=fgate x.min=$wgate+$tox3 x.max=$wgate+$tox3+$wfin y.min=$lds #y.max=$lds+$lg z.min=$hfin+$tox1 z.max=$hfin+$tox1+$tox2
 
# Define doping
doping region=2 uniform p.type conc=1e15
doping region=2 uniform n.type conc=1e20 y.max=$lds
doping region=2 uniform n.type conc=1e20 y.min=$lds+$lg
 
interface n.i
 
material material=oxide semiconductor nc300=1e19 nv300=1e19 taun0=1.0 taup0=1.0 mc=0.4 mv=0.4
 
material material=nitride semiconductor nc300=1e19 nv300=1e19 mun=1.0e-1 mup=1.0e-1 mc=0.4 mv=0.4 taun0=1.0 taup0=1.0 
 
contact name=gate n.poly
contact name=gate2 n.poly
contact name=gate3 n.poly
 
 
nitridecharge  nt.p=0.0e20 nt.n=1.0e20 tau.n=1.0e-4 tau.p=1.0e-4 elec.depth=1.5 hole.depth=1.5 sigmat.n=1.0e-10 sigmat.p=1.0e-10 sigman.p=1.0e-15 sigmap.n=1.0e-15 pf.barrier=1.5
 
probe name=nettcharge sonos.charge integrate z.min=$hfin+$tox1 z.max=$hfin+$tox1+$tox2 x.min=$wgate+$tox3 x.max=$wgate+$tox3+$wfin y.min=$lds y.max=$lds+$lg
 
 
#programming
models srh
method carriers=2
 
 
solve init sonos
solve prev
 
output sonos.rates val.band con.band band.temp
 
probe name=nettcharge sonos.charge integrate z.min=$hfin+$tox1-0.005 z.max=$hfin+$tox1+$tox2+0.005 x.min=$wgate+$tox3-0.005 x.max=$wgate+$tox3+$wfin+0.005 y.min=$lds-0.005 y.max=$lds+$lg+0.005 
 
log outf=program.log j.tun sonos.curr
solve vgate=16 ramptime= 1e-9 tstep=1e-12 tfinal=1e-9
 
#keep voltages constant and perform transient programming
 
method dt.min=1.0e-9
solve tstop=1.0e-8 
save outf=sonosex03_charging_m8.str
solve tstop=1.0e-7 
method dt.min=1.0e-8
solve tstop=1e-6
save outf=sonosex03_charging_m6.str
method dt.min=1.0e-7
solve tstop=1e-5 
method dt.min=1.0e-6
solve tstop=1e-4 
save outf=sonosex03_charging_m4.str
method dt.min=1.0e-5
solve tstop=1e-3 
method dt.min=1.0e-4
solve tstop=1e-2 
save outf=sonosex03_charging_m2.str
method dt.min=1.0e-3
solve tstop=1.0e-1 
solve tstop=1.0 
save outf=sonosex03_charging_m0.str
log off 
##### Vt test after programming
 
 
quit

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