People always say that the short-circuit withstand capability (SCWC) of an IGBT is approximately 10us or 5us for latest model of IGBTs. This information helps to design an overcurrent/short-circuit protection scheme with response time shorter than the SCWC.
I've been searching for the similar SCWC (as a rule-of-thumb) for a power MOSFET but to no avail so far. I wish to design an overcurrent/short-circuit protection circuit for a 3-phase inverter using IRFP4110 (http://www.irf.com/product-info/datasheets/data/irfp4110pbf.pdf). What is the typical response time of an overcurrent/short-circuit protection scheme for a power MOSFET?
Before considering protection circuit response times, you should analyse the short-circuit withstand capability from the given SOA characteristics. You'll face most likely problems, if the dI/dt slope isn't limited by the external circuit, e.g. utilizing inductance. In contrast to IGBT, MOSFET usually don't expose a (short time) safe desaturation mode, because saturation currents are simply too high.