Cherry Shan
Newbie level 3
Sentaurus Device simulation problem：Why are the inner and outer gate voltage not same
Hey everybody, I am a novice for the sentaurus, I am trying to use it to simulate a silicon-based MOSFET.
When I simulate the transfer characteristics of the device with the VGS=1.5V and VDS=0.05V, the drain current turns out to be constant.
And I found the outer gate voltage varies from 0 to 1.5V, however, the inner gate voltage varies from 0 to 6.5V!
I don't know why.
Any help would be truly appreciated.
Thanks,
Cherry
Hey everybody, I am a novice for the sentaurus, I am trying to use it to simulate a silicon-based MOSFET.
When I simulate the transfer characteristics of the device with the VGS=1.5V and VDS=0.05V, the drain current turns out to be constant.
And I found the outer gate voltage varies from 0 to 1.5V, however, the inner gate voltage varies from 0 to 6.5V!
I don't know why.
Any help would be truly appreciated.
Thanks,
Cherry