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relationship between gm and Ids

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hung_wai_ming@hotmail.com

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gm 2ids

Relationship between gm and Ids can be drawn in the following:

(1) gm = uCox(W/L)(Vgs-Vt)
(2) gm = 2Ids/(Vgs-Vt)
(3) gm= sqrt(2uCox(W/L)Ids)

From 2, 3, we see gm is proportional to Ids and sqrt(Ids), so how should we interpret these two cases?
 

2- is for constant Veff >> gm prop. to Ids
3- is for constant size >> gm prop. to sqrt(Ids)
 

What if I have now a NMOS transistor biased at Vgs, with fixed W/L, and source to VSS, then I flow in different Ids from drain side, what is the relationship between Ids and gm?
 

I suppose you misinterpret the meaning of Ids.
Ids is NOT the actual current between drain and source, but instead the maximum possible drain current Id.
 

your transistor needs to be in saturation. Ids in (1) (2) and (3) is the drain source current when the device is in saturation.
 

In 2), for a given device, (Vgs-Vt) is prop. to sqrt(Ids), so 2) and 3) are actually equivalent.
 

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