abhijitrc
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Hi,
We are using CFY67-08 ( infenion make-HEMT ) for our LNA design, for biasing purpose we are using a sequential bias card, initially devices have been tested separately in a jig and it is observed that at Vds=2V we are drawing a drain current of 10 mA, with a leakage current (gate leakage current) at 0.02micro amps., but once the devices have been incorporated with bias card and later we are observing there is a change in the gate leakage current which is 0.3mA ,ie, the value is quite large, now my doubt is :
1. This gate leakage current will change the device performance ?
2. Whether with time device performance will change and there is a chance of damage of the device.!!
3. Noise figure will change ?
Plz guide me.
We are using CFY67-08 ( infenion make-HEMT ) for our LNA design, for biasing purpose we are using a sequential bias card, initially devices have been tested separately in a jig and it is observed that at Vds=2V we are drawing a drain current of 10 mA, with a leakage current (gate leakage current) at 0.02micro amps., but once the devices have been incorporated with bias card and later we are observing there is a change in the gate leakage current which is 0.3mA ,ie, the value is quite large, now my doubt is :
1. This gate leakage current will change the device performance ?
2. Whether with time device performance will change and there is a chance of damage of the device.!!
3. Noise figure will change ?
Plz guide me.