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Material: Si, NPN
Maximum continuous collector dissipation power (Pc): 180mW
Limit DC collector-base (Vcb): 45V
Limit collector-emitter voltage (Vce): -
Limit voltage emitter-base (Veb): 4V
Maximum continuous collector current of transistor (Ic max): 50mA
Temperature limit of pn junction (Tj): 175ºC
Cutoff frequency of current transfer ratio (Ft) of the transistor: - 900MHz
Capacity of the collector junction (Cc), Pf: 0.6
Static coefficient of current transfer in the circuit with common emitter (Hfe), min/max: 40/170
Case: TO72
Application of transistor: RF, Medium Power General Purpose
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