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RBB and FBB for leakage reduction

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Forward biasing the body lowers the threshold voltage and RBB makes the threshold voltage higher. However from this formula:

Vt=Vt0+γ(√(Vsb+2ΦF)-√(2ΦF))

The opposite happens to be true for nmos. Making Vsb negative for an nmos make Vt less than what it was initially. Any reason why
 

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