Questions about transistor doping

[brahma]

intrinsic semconductor material are doped with impurities. these impurities are either 3rd group or 5th group elements creating either a single hole or a electron within that particular region (1: 10^8 or something). The question is WHY CANT WE DOPE 6TH OR 2ND GROUP ELEMENTS WHICH CAN PROVIDE MORE HOLES OR ELECTRON SO THE DOPING CONCENTRATION CAN BE REDUCED??

 

[flatulent]

Re: transistor doping

These atoms are much larger or smaller than silicon and will disrupt the crystal structure. This will drastically reduce the mobility of the free charges.

 

[No one]

Re: transistor doping

Hi;
Do you read the books written by Streetman and Sze?

 

[sabari]

transistor doping

please refer streetman and smith.that wil clarify ur doubts

 

[A.Anand Srinivasan]

Re: transistor doping

this is due to the large size difference and the lack of reactivity which would disrupt crystal structure as well lead to difficulty in production

 

[yjkwon57]

Re: transistor doping

Hi~~

Intrinsic semiconductor is referred for the semicondoctor material without any imputiries. Semiconductor material with some impurities is called extrinsic semiconductor. By the way, the impurities other than the dopants used in the semiconductor fabrication processing are not used becaused of the inactivity of the energy levels introduced by them. The defects caused by the differences in the atom radii between silicon and dopants can be minimized by introducing some atoms which will not add some inactive energy levels between energy gap.

Bye~~