Advanced Member level 4
intrinsic semconductor material are doped with impurities. these impurities are either 3rd group or 5th group elements creating either a single hole or a electron within that particular region (1: 10^8 or something). The question is WHY CANT WE DOPE 6TH OR 2ND GROUP ELEMENTS WHICH CAN PROVIDE MORE HOLES OR ELECTRON SO THE DOPING CONCENTRATION CAN BE REDUCED??