Kezman
Member level 3
hello everyone:
I need to design a power amplifier in 14-16GHz. I have decided to use EID1416-12. This FET is a internally matched power FET. Several parameters of it in continuous state show as follows: Vds=10v Vgs=-3v Id(1dB)=4A(max=5A) G(1dB)=5dB. We can find it has very high channel current. So I hope someone can give me some advices about its direct current bias design or others which I need to notice.Thanks!!!
regards
Kezman
I need to design a power amplifier in 14-16GHz. I have decided to use EID1416-12. This FET is a internally matched power FET. Several parameters of it in continuous state show as follows: Vds=10v Vgs=-3v Id(1dB)=4A(max=5A) G(1dB)=5dB. We can find it has very high channel current. So I hope someone can give me some advices about its direct current bias design or others which I need to notice.Thanks!!!
regards
Kezman