Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.
EEPROM is similar to flash memory (sometimes called flash EEPROM).
The principal difference is that EEPROM requires data to be written or erased one byte at a time whereas flash memory allows data to be written or erased in blocks. This makes flash memory faster.
...
Flash memory is a later form of EEPROM. In the industry, there is a convention to reserve the term EEPROM to byte-wise writable memories compared to block-wise writable flash memories. EEPROM takes more die area than flash memory for the same capacity because each cell usually needs both a read, write and erase transistor where in flash memory the erase circuits are shared by blocks of many ( often 512×8 ) cells.
Flash is a type of EEPROM. Generally flash is better: cheaper, has faster read-write-erase periods and is denser.
The main differences are that Flash is block eraseable and flash can be erased and programmed with TTL level voltages.
the key difference is that:
if you have any data in a page of flash to be reserved when you do a new data write within the same page but different address ,you have to read the old data first ,then write back with the new data to be writen together.
but to eeprom ,you do not have to do this.
This site uses cookies to help personalise content, tailor your experience and to keep you logged in if you register.
By continuing to use this site, you are consenting to our use of cookies.
