EEPROM is similar to flash memory (sometimes called flash EEPROM).
The principal difference is that EEPROM requires data to be written or erased one byte at a time whereas flash memory allows data to be written or erased in blocks. This makes flash memory faster.
Flash memory is a later form of EEPROM. In the industry, there is a convention to reserve the term EEPROM to byte-wise writable memories compared to block-wise writable flash memories. EEPROM takes more die area than flash memory for the same capacity because each cell usually needs both a read, write and erase transistor where in flash memory the erase circuits are shared by blocks of many ( often 512×8 ) cells.