1. TSMC 180nm tech nmos transistor has a mobilty of 265cm2/v-sec where as 130nm nmos predictive tech model file shows mobility of 0.05..cm2/v-sec.
such a large variation in mobility is it possible as we go down from 180 to 130nm?
2. if anybody has design procedure for simple 2 stage opamp (90nm) or any related materials pls forward it to sat_mm@indiatimes.com
1. TSMC 180nm tech nmos transistor has a mobilty of 265cm2/v-sec where as 130nm nmos predictive tech model file shows mobility of 0.05..cm2/v-sec.
such a large variation in mobility is it possible as we go down from 180 to 130nm?
2. if anybody has design procedure for simple 2 stage opamp (90nm) or any related materials pls forward it to sat_mm@indiatimes.com
1) No.... It is not possible. The unit is wrong.
2) You can take a look in CMOS Analog circuit design of Allen and Holberg. There you will find a design procedure for a simple 2 stage op-amp. Chapter 6, section 6.3.
The procedure shown there is valid for any technology.