Feb 9, 2003 #1 M mike_bihan Full Member level 3 Joined Mar 21, 2002 Messages 182 Helped 0 Reputation 0 Reaction score 0 Trophy points 1,296 Activity points 1,531 I have a question about the 'thickness' and 'conductivity' parameters of N-well in standard 2-well 0.18um CMOS Logic process, thanks! These two parameters are very critical for the performance of RF passive parameters. thanks again!
I have a question about the 'thickness' and 'conductivity' parameters of N-well in standard 2-well 0.18um CMOS Logic process, thanks! These two parameters are very critical for the performance of RF passive parameters. thanks again!
Feb 9, 2003 #2 superluminal Member level 4 Joined Jan 31, 2002 Messages 79 Helped 1 Reputation 2 Reaction score 0 Trophy points 1,286 Location Inside a quantum well Activity points 806 I did not understand you well ! these are very easily found in the process file of "your" fab
Feb 10, 2003 #3 M mike_bihan Full Member level 3 Joined Mar 21, 2002 Messages 182 Helped 0 Reputation 0 Reaction score 0 Trophy points 1,296 Activity points 1,531 they are quite new, Tech support is not very mature. Process develop group can not give me enough support in this field, anyway, who will need so detail info about Logic process.
they are quite new, Tech support is not very mature. Process develop group can not give me enough support in this field, anyway, who will need so detail info about Logic process.
Feb 10, 2003 #4 A alcohol Member level 1 Joined Dec 12, 2001 Messages 41 Helped 1 Reputation 2 Reaction score 1 Trophy points 1,288 Location earth Activity points 218 The two parameters is say inductor and cap n-will pick up difference mos