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Question about a pn junction diodes

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adinand1024

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doubt in diodes

in a pn junction diode , if we inc the doping density of the p and n side(or just any one side), what will be its effect on the built in(barrier) potential difference ? (will it inc. or dec.)
 

Re: doubt in diodes

As the concentration of charge carriers increase, when there is no potential applied across the diode these charge carriers move in to the opposite region due to concentration gradient... as doping increases naturally more charges migrate... hence the built in potential that develops as a result of these charges increases...
 

doubt in diodes

as th doping concentration is increased depletion width increases there by increasing the potential difference .
 

doubt in diodes

the junction potential Vd=kT/q Ln(Na*Nd/(ni)^2)

As doping densities increases the junc potential increases
 

Re: doubt in diodes

Yes ,it increases
 

doubt in diodes

as the doping density increases,the charge carriers increases causing INCREASE in pd.
 

Re: doubt in diodes

It will increase , formed depleion region will be larger in lower concentration side.
 

Re: doubt in diodes

Hi All,

The barrier width which is on the side of highier doping will decrease....

Sai
 

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