borislee
Junior Member level 3
the following circuit is used as 5V tolerance input circuit for a 3.3V CMOS process.
all the MOSs are 3.3V devices.
as I know, the break-down voltage of the PN between the drain and the substract of N3 is not higher than the break-down voltage of the gate of N2. So I think that using N3 to tolerance 5V is not reasonable.
who can tell me why I am wrong.
BTW, when the PAD is 5V, the ESD device of P1 will have current so it is not good here. Am I right? What is the better circuit for ESD?
all the MOSs are 3.3V devices.
as I know, the break-down voltage of the PN between the drain and the substract of N3 is not higher than the break-down voltage of the gate of N2. So I think that using N3 to tolerance 5V is not reasonable.
who can tell me why I am wrong.
BTW, when the PAD is 5V, the ESD device of P1 will have current so it is not good here. Am I right? What is the better circuit for ESD?