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Emitter junction is created by diffusion from poly source that have implanted impurity (resistance of poly about 50 Ohm/sq). It's allow to create shallow emitter junction and descrease p-well junction depth, ans associated capacitances too. 2 base let to decrease base resistance. All of this are usefull for high-frequencies and low-noise application.
The transistor is high-speed device for little BE junction capicitor . So if u
don't use poly-emmiter bipolar process , you must choose other advanced
process . such as oxide isolation process .
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