PNP BJT parameter 'isc' question

[yonghongdeng]

bjt parameter

I got a vertical PNP BJT Model from a foundry. but i found the parameter 'isc=1e+11' , it is the base-collector saturation leakage current value. i think is too large than the normal value.
what do you think about the value?my friend. thank u!

some other information for the BJT :emitter area = 10um*10um
0.35um 3.3V CMOS process

 

[erikl]

bjt value

I got a a vertical PNP BJT Model from a foundry. but i found the parameter 'isc=1e+11' , it is the base-collector saturation leakage current value. i think is too large than the normal value.
what do you think about the value?my friend. thank u!

some other information for the BJT :emitter area = 10um*10um
0.35um 3.3V CMOS process

Probably it's a typo und should read 'isc=1e-11' .

Here's a vertical PNP BJT Model for a 0.18µm process technology with even much lower saturation current.

May be this might help.

.model pnp_vert pnp
*
* SPECIFIC HSPICE
+ tref = 27
+ subs = 1
*
+ level = 1
+ isc = 6.1e-17
*
+ bf = 2.4597
+ nf = 1.0
+ br = 0.0295 nr = 1.0424 ise = 1.882e-17
+ ne = 1.4485 isc = 4.69e-17 nc = 1.00761
+ vaf = 569.32 var = 19.62 ikf = 7.164e-4
+ ikr = 1.90546e-3 rb = 662.57
+ rbm = 24.076 irb = 2.098e-5 re = 11.507
+ rc = 0.7 cje = 2.47058e-13 vje = 0.894081
+ mje = 0.375778 fc = 0.5 cjc = 2.7197e-13
+ vjc = 0.815916 mjc = 0.361473 cjs = 2.53875e-12
+ vjs = 0.738524 mjs = 0.236773 tf = 1e-10
+ xtf = 1 itf = 0.01 vtf = 5

 

[yonghongdeng]

information about bjt parameters

right! "isc=1e-11" thanks