icd
Junior Member level 3
Hi everyone,
I started reading about the fabrication and the physics of the pmos, nmos and the cmos, and to be honest im confused about many things so i was hoping if anyone can help me here. i've read many tutorials and still confused !
1) we have different types of substarte (p-type sub & n-type sub) also we have different types of channel (p-type channel & n-type channel) then we have pmos and nmos. so my understanding to this is p-type substrste means n-type channel means NMOS and n-type substrate means p-type channel and PMOS. but what is confusing me don't we make n-well in the p-substarte to make the pmos. so how come we have a p-substarte and we make a pmos ?
2)to make the cmos work as a diode do we need the channel to be the same as the substarte ? how we can make the space charg ? is it based on the biasing or the channel?
3) to make pmos we need an n-well, but how many n-well we need one or two? or we need two incase of fabricating the cmos?
4) the three modes of the mos (accumulation, depletion and strong inversion) are these modes depends on the biasing? i.e do we need to change the biasing to get the depletion after the accumulation or we need just to increase the baising ?
even though i've read many tutorials, any one that starts from the basic will be appreciated.
I started reading about the fabrication and the physics of the pmos, nmos and the cmos, and to be honest im confused about many things so i was hoping if anyone can help me here. i've read many tutorials and still confused !
1) we have different types of substarte (p-type sub & n-type sub) also we have different types of channel (p-type channel & n-type channel) then we have pmos and nmos. so my understanding to this is p-type substrste means n-type channel means NMOS and n-type substrate means p-type channel and PMOS. but what is confusing me don't we make n-well in the p-substarte to make the pmos. so how come we have a p-substarte and we make a pmos ?
2)to make the cmos work as a diode do we need the channel to be the same as the substarte ? how we can make the space charg ? is it based on the biasing or the channel?
3) to make pmos we need an n-well, but how many n-well we need one or two? or we need two incase of fabricating the cmos?
4) the three modes of the mos (accumulation, depletion and strong inversion) are these modes depends on the biasing? i.e do we need to change the biasing to get the depletion after the accumulation or we need just to increase the baising ?
even though i've read many tutorials, any one that starts from the basic will be appreciated.
