There are component Loss which has to be considered.
Conduction Loss (MOSFET & Diode) --> Conduction loss is generated in the RDS(ON) and the Vf of the Diode, (Loss Generates when that particular part turned on)
Switching Loss (Dynamic) --> There is particular time needed for transition between the parts on and off states. (So more power will be consumed during this transition period)
So Select MOSFET which is with value of low RDS(ON) and with fast switching transients,
Select Diodes with low Vf and fast recovery periods.
The switching loss also due to the capacitance, high value capacitances are tends to get charge slowly, which could cause the transition to be more and leads to consume more power, So CRSS & CGD in MOSFET data sheets should be verified and considered as these factors also leads to the efficiency issues which occurs during transition time.