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PIN Photodiode for SIlvaco TCAD

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ida89

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SIlvaco TCAD (IC Design)

Hye, how to insert concentration of In57Ga43As in PIN Photodiode.

this is how i declare the materials that i use in my design. by using this source code, i get IV Characteristic

material region num=1 y.min=0 y.max=10 InP
material region num=2 y.min=10 y.max=15 InGaAs
material region num=3 y.min=15 y.max=20 InP

than, i try to change the concentration of InGaAs like this:

material region num=1 y.min=0 y.max=10 InP
material region num=2 y.min=10 y.max=15 In57Ga43As
material region num=3 y.min=15 y.max=20 InP

and i notice that the IV Characteristics is the same like the 1st source code that i use. is it correct how i write the 2nd coding for InGaAs? or there is another way to insert the concentration of InGaAs? thanks
 
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bhyangtze

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Hi, are you Chinese? If you are, we can tell you very sample. In57Ga43As =InGaAs. You can try the "doping". I hope it will uesfull for you.
 

ida89

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hye bhyangtze, yes. can u explain to me? thanks :)

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hye bhyangtze, yes. can u explain to me? thanks :)
 

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