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Parameters for good Monte Carlo simulation

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jutek

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hello

i want to do a monte carlo simulation.

what process variation should i set for:

transistor W and L change
resistor W and L change

i set 10mv/sqrt(W*L) for transistor vth variation

what Ar value i should set for resistance variation in Ar/sqrt(w*l)

what else should i parametrize to do a good simulation?

and what after that. i will have monte carlo results, if fails (huge variations) what should i change to achieve better results before using a special layout techniques.

regards
 

vladimir1984

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Re: monte carlo

basically the deviations of device parameters is settled by guys, which are responsible for models.
But if you haven't special files with defined deviations, try to set as more as possible deviation parameters to get a worst case simulation results
 

cliffj

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Re: monte carlo

Since we care much on the threshold mismatch for MOS, you can vary the oxide thickness(tox), nch(doping concentration), dw, dl , dvth0 etc...
 

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Mistico_Pereyra

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Re: monte carlo

Process parameters like Vto, tox, Nsub , Uo(mobility), Rsh and Rdsw are most critical transistor MOS parameters!!

they affect directly in the I-V curves!!
 

jutek

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Re: monte carlo

it is clear for me, but i don't have mismatch documentation, and i want to estimate this changes so what values should i take for:

transistors W nad L changes
Ar for resistor and also resistor W and L changes

regards
 

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