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opto-isolator calculations

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planet69

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The picture shows of a 4N35 (photo-transistor side) with its voltage-divider bias configuration.
Can the calculation methods to find Vce, Ie, Ic, etc. for a normal voltage-divider bias configured transistor (i.e. BC337) be applied also on a photo-transistor of an opto-isolator as the attached picture?
 

I can't see any reason why not ..
After all you can make a photo-transistor of almost any normal transistor by exposing its structure to light ..

Regards,
IanP
 

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