RF79540
Newbie level 1
hbt simulation
Top 3 company in the industry around Boston area.Entry level(new graduate) and experienced people are welcome.Please send message if you are intersted.
Position 1：
Job Title: Design Engineer IV - VI
Category: Engineering
Division: Handsets
Job Description:
RF/Microwave, GaAs IC and module design engineering - This entry level
position entails assisting in the design and development of CDMA and WCDMA
power amplifiers (PAs) and front-end modules (FEMs) used in portable
applications. FEM designs involve the integration of a broad suite of
RF technologies including, GaAs HBT PAs, GaAs pHEMT PAs and
switches, SAW and BAW RF filters.
Assisting in the design of PAs, switches and DC bias control circuitry at
the GaAs IC level will be required, as well as module level design and
integration. The primary CAD tools employed in our design process are ADS or
AWR MO for circuit design and layout, Sonnet or Momentum for
electromagnetic simulations and EPD/AutoCAD for module substrate layouts.
The design engineer will also perform device and circuit level
characterization and diagnostics using the latest state of the art in RF/
microwave test equipment.
Experience:
' Some experience in design & development of MMIC circuits
' Proficient in analysis, simulation and design using CAD tools such as ADS,
AWR, Cadence, Sonnet, etc'
' Hands-on testing and diagnostics related RF measurement experience
' BSEE, MSEE, PhD, RF&Microwave training, 1-3yrs experience in RF design and
development
Position 2：
Job Title: Design Engineer - Mid Level/Senior
Category: Engineering
Division: Networks
Location: Boston, Massachusetts
Job Description:
RF/Microwave, GaAs IC and module design engineering - This work entails all
aspects of the design and development of WiFi and WiMAX power amplifiers (
PAs) and front-end modules (FEMs) used in portable applications. FEM designs
involve the integration of a broad suite of RF technologies
including, GaAs HBT PAs, GaAs pHEMT PAs and switches, SAW and BAW RF filters.
The design of PAs, switches and DC bias control circuitry at the GaAs IC
level will be required, as well as module level design and integration. The
primary CAD tools employed in our design process are ADS or AWR MO for
circuit design and layout, Sonnet or Momentum for electromagnetic
simulations and EPD/AutoCAD for module substrate layouts. The design
engineer will also perform device and circuit level characterization and
diagnostics using the latest state of the art in RF/microwave test equipment.
ESSENTIAL DUTIES AND RESPONSIBILITIES include the following:
'X Design, analysis and simulation of RF/Microwave circuits using ADS or AWR
MO
'X IC and module layout using ADS, AWR MO and/or AutoCAD w/EPD
'X Device and circuit test and characterization using RF/Microwave Test
Equipment
'X Preparation of reports, status presentations and product documentation
Experience:
EDUCATION AND/OR EXPERIENCE:
'X
MSEE, RF&Microwave training, > 3 yrs experience in RF design and development
OR
'X Phd with thesis in RF&Microwave, GaAs devices and circuits
SKILLS AND KNOWLEDGE REQUIRED:
'X Proficient in analysis, simulation and design using CAD tools such as ADS
and/or AWR
'X Hands-on testing and diagnostics related RF measurement experience
'X Good familiarity with RF/Microwave test equipment and measurement
techniques
SKILLS AND KNOWLEDGE DESIRED:
'X Experience in design & development of linear, GaAs HBT and/or pHEMT Power
Amplifiers
'X Experience with electromagnetic simulation using Sonnet and/or Momentum
Position 3：
Job Title: Design Engineer - Senior/Principal
Category: Engineering
Division: Networks
Location: Boston, Massachusetts
Job Description:
RF/Microwave, GaAs IC and module design engineering - This work entails all
aspects of the design and development of WiFi and WiMAX power amplifiers (
PAs) and front-end modules (FEMs) used in portable applications. FEM designs
involve the integration of a broad suite of RF technologies
including, GaAs HBT PAs, GaAs pHEMT PAs and switches, SAW and BAW RF filters.
The design of PAs, switches and DC bias control circuitry at the GaAs IC
level will be required, as well as module level design and integration. The
primary CAD tools employed in our design process are ADS or AWR MO for
circuit design and layout, Sonnet or Momentum for electromagnetic
simulations and EPD/AutoCAD for module substrate layouts. The design
engineer will also perform device and circuit level characterization and
diagnostics using the latest state of the art in RF/microwave test equipment.
ESSENTIAL DUTIES AND RESPONSIBILITIES include the following:
'X Design, analysis and simulation of RF/Microwave circuits using ADS or AWR
MO
'X IC and module layout using ADS, AWR MO and/or AutoCAD w/EPD
'X Device and circuit test and characterization using RF/Microwave Test
Equipment
'X Preparation of reports, status presentations and product documentation
Experience:
EDUCATION AND/OR EXPERIENCE:
'X BSEE, MSEE, RF&Microwave training, > 8 yrs experience in RF design and
development
SKILLS AND KNOWLEDGE REQUIRED:
'X Proficient in analysis, simulation and design using CAD tools such as ADS
and/or AWR
'X Hands-on testing and diagnostics related RF measurement experience
'X Strong familiarity with RF/Microwave test equipment and measurement
techniques
SKILLS AND KNOWLEDGE DESIRED:
'X Significant experience in design & development of linear, GaAs HBT and/or
pHEMT Power Amplifiers
'X Experience with electromagnetic simulation using Sonnet and/or Momentum
Position 4
Job Title: Design Engineer IV - VI
Category: Engineering
Division: Networks
Job Description:
RF/Microwave, GaAs IC and module design engineering - This work entails all
aspects of the design and development of WLAN and WiMAX power amplifiers (
PAs) and front-end modules (FEMs)used in portable applications. FEM designs
involve the integration of a broad suite of RF technologies
including, GaAs HBT PAs, GaAs pHEMT PAs and switches, SAW and BAW RF filters.
The design of PAs, switches and DC bias control circuitry at the GaAs IC
level will be required, as well as module level design and integration. The
primary CAD tools employed in our design process are ADS or AWR MO for
circuit design and layout, Sonnet or Momentum for electromagnetic
simulations and EPD/AutoCAD for module substrate layouts. The design
engineer will also perform device and circuit level characterization and
diagnostics using the latest state of the art in RF/microwave test equipment.
Experience:
- Significant experience in design & development of linear, GaAs HBT and/or
pHEMT Power Amplifiers
- Proficient in analysis, simulation and design using CAD tools such as ADS,
AWR, Cadence, Sonnet, etc...
- Hands-on testing and diagnostics related to RF measurement experience
- BSEE, MSEE, RF & Microwave training >5 years experience in RF design and
development
Top 3 company in the industry around Boston area.Entry level(new graduate) and experienced people are welcome.Please send message if you are intersted.
Position 1：
Job Title: Design Engineer IV - VI
Category: Engineering
Division: Handsets
Job Description:
RF/Microwave, GaAs IC and module design engineering - This entry level
position entails assisting in the design and development of CDMA and WCDMA
power amplifiers (PAs) and front-end modules (FEMs) used in portable
applications. FEM designs involve the integration of a broad suite of
RF technologies including, GaAs HBT PAs, GaAs pHEMT PAs and
switches, SAW and BAW RF filters.
Assisting in the design of PAs, switches and DC bias control circuitry at
the GaAs IC level will be required, as well as module level design and
integration. The primary CAD tools employed in our design process are ADS or
AWR MO for circuit design and layout, Sonnet or Momentum for
electromagnetic simulations and EPD/AutoCAD for module substrate layouts.
The design engineer will also perform device and circuit level
characterization and diagnostics using the latest state of the art in RF/
microwave test equipment.
Experience:
' Some experience in design & development of MMIC circuits
' Proficient in analysis, simulation and design using CAD tools such as ADS,
AWR, Cadence, Sonnet, etc'
' Hands-on testing and diagnostics related RF measurement experience
' BSEE, MSEE, PhD, RF&Microwave training, 1-3yrs experience in RF design and
development
Position 2：
Job Title: Design Engineer - Mid Level/Senior
Category: Engineering
Division: Networks
Location: Boston, Massachusetts
Job Description:
RF/Microwave, GaAs IC and module design engineering - This work entails all
aspects of the design and development of WiFi and WiMAX power amplifiers (
PAs) and front-end modules (FEMs) used in portable applications. FEM designs
involve the integration of a broad suite of RF technologies
including, GaAs HBT PAs, GaAs pHEMT PAs and switches, SAW and BAW RF filters.
The design of PAs, switches and DC bias control circuitry at the GaAs IC
level will be required, as well as module level design and integration. The
primary CAD tools employed in our design process are ADS or AWR MO for
circuit design and layout, Sonnet or Momentum for electromagnetic
simulations and EPD/AutoCAD for module substrate layouts. The design
engineer will also perform device and circuit level characterization and
diagnostics using the latest state of the art in RF/microwave test equipment.
ESSENTIAL DUTIES AND RESPONSIBILITIES include the following:
'X Design, analysis and simulation of RF/Microwave circuits using ADS or AWR
MO
'X IC and module layout using ADS, AWR MO and/or AutoCAD w/EPD
'X Device and circuit test and characterization using RF/Microwave Test
Equipment
'X Preparation of reports, status presentations and product documentation
Experience:
EDUCATION AND/OR EXPERIENCE:
'X
MSEE, RF&Microwave training, > 3 yrs experience in RF design and development
OR
'X Phd with thesis in RF&Microwave, GaAs devices and circuits
SKILLS AND KNOWLEDGE REQUIRED:
'X Proficient in analysis, simulation and design using CAD tools such as ADS
and/or AWR
'X Hands-on testing and diagnostics related RF measurement experience
'X Good familiarity with RF/Microwave test equipment and measurement
techniques
SKILLS AND KNOWLEDGE DESIRED:
'X Experience in design & development of linear, GaAs HBT and/or pHEMT Power
Amplifiers
'X Experience with electromagnetic simulation using Sonnet and/or Momentum
Position 3：
Job Title: Design Engineer - Senior/Principal
Category: Engineering
Division: Networks
Location: Boston, Massachusetts
Job Description:
RF/Microwave, GaAs IC and module design engineering - This work entails all
aspects of the design and development of WiFi and WiMAX power amplifiers (
PAs) and front-end modules (FEMs) used in portable applications. FEM designs
involve the integration of a broad suite of RF technologies
including, GaAs HBT PAs, GaAs pHEMT PAs and switches, SAW and BAW RF filters.
The design of PAs, switches and DC bias control circuitry at the GaAs IC
level will be required, as well as module level design and integration. The
primary CAD tools employed in our design process are ADS or AWR MO for
circuit design and layout, Sonnet or Momentum for electromagnetic
simulations and EPD/AutoCAD for module substrate layouts. The design
engineer will also perform device and circuit level characterization and
diagnostics using the latest state of the art in RF/microwave test equipment.
ESSENTIAL DUTIES AND RESPONSIBILITIES include the following:
'X Design, analysis and simulation of RF/Microwave circuits using ADS or AWR
MO
'X IC and module layout using ADS, AWR MO and/or AutoCAD w/EPD
'X Device and circuit test and characterization using RF/Microwave Test
Equipment
'X Preparation of reports, status presentations and product documentation
Experience:
EDUCATION AND/OR EXPERIENCE:
'X BSEE, MSEE, RF&Microwave training, > 8 yrs experience in RF design and
development
SKILLS AND KNOWLEDGE REQUIRED:
'X Proficient in analysis, simulation and design using CAD tools such as ADS
and/or AWR
'X Hands-on testing and diagnostics related RF measurement experience
'X Strong familiarity with RF/Microwave test equipment and measurement
techniques
SKILLS AND KNOWLEDGE DESIRED:
'X Significant experience in design & development of linear, GaAs HBT and/or
pHEMT Power Amplifiers
'X Experience with electromagnetic simulation using Sonnet and/or Momentum
Position 4
Job Title: Design Engineer IV - VI
Category: Engineering
Division: Networks
Job Description:
RF/Microwave, GaAs IC and module design engineering - This work entails all
aspects of the design and development of WLAN and WiMAX power amplifiers (
PAs) and front-end modules (FEMs)used in portable applications. FEM designs
involve the integration of a broad suite of RF technologies
including, GaAs HBT PAs, GaAs pHEMT PAs and switches, SAW and BAW RF filters.
The design of PAs, switches and DC bias control circuitry at the GaAs IC
level will be required, as well as module level design and integration. The
primary CAD tools employed in our design process are ADS or AWR MO for
circuit design and layout, Sonnet or Momentum for electromagnetic
simulations and EPD/AutoCAD for module substrate layouts. The design
engineer will also perform device and circuit level characterization and
diagnostics using the latest state of the art in RF/microwave test equipment.
Experience:
- Significant experience in design & development of linear, GaAs HBT and/or
pHEMT Power Amplifiers
- Proficient in analysis, simulation and design using CAD tools such as ADS,
AWR, Cadence, Sonnet, etc...
- Hands-on testing and diagnostics related to RF measurement experience
- BSEE, MSEE, RF & Microwave training >5 years experience in RF design and
development