Nested Subcircuits in Spice Scripting

xRC Transistor Subcircuit

vgb 1 0 2.5 ac 0.1
vcc 1003 0 5
ro 1003 1000 6e4
*Rso in the amplifier circuit, when zero as it sould it causes unstability.
rs0 1002 0 1
vb 1005 0  0 ac 0
xmos     1003 1002  1005   1  0  VC_MOSFET


*Subcircuit 	 D	S   B	   G	   Gnd				    		
.SUBCKT VC_MOSFET	 2  0101  14  1000  1001
cgd 1 211 15f
cgs 1 0100 15f
cbd 211 14 15f
cbs 0100 14 15f
*Rd in the transistor model
rd 2 211 100
*Rs in the transistor model
rs 0100 0101 100
bd 211 14 I=(-1*I(b2))
bs 14 0100 I=(1*I(b1))


.param nbeff=8E+29u;
.param tox=6E-3u;
.param e0=8.85E-6u;
.param esi=12.1104E+6u;
.param q=1.6E-13u;
.param eox=2.1025E+6u;
.param gamma0={(tox/(eox*e0))*((2*e0*esi*q*nbeff)^0.5)}
.param vfb=-0.42E+6u;
.param dibll=0.00118E+6u;
.param dible=-2.574E+6u;
.param vfbll=0.134E+6u;
.param vfble=-0.79E+6u;
.param csll=-0.0615E+6u;
.param csle=0.801E+6u;
.param leff=2.5u;
.param vfbm={vfb+((vfbll)*(leff)^vfble)}
.param gamma={gamma0*exp((csll)*(leff)^csle)}
.param vt=26E+3u;
.param ni=8.3E+21u;
.param phif={vt*log(nbeff/ni)}
.param vtr={1/vt}
.param gammar={1/(gamma0)^2}
.param alpha=0.07E+6u;
.param beta0=1.109E+6u;
.param z=2u;
.param miodop=541E+2u;
.param vsat=1.23E+11u;
.param n=10;
.param wk={leff/n}
.param cox={eox*e0/tox}
.param a1=alpha
.param a2={(miodop/(wk*vsat))^beta0}
.param a3=beta0
.param a4={((z*miodop)/wk)}
.param a5=cox
.param a6={sqrt(2*q*e0*esi*nbeff)}
.param coxn={(cox*leff*z)/n}
.param cn={(sqrt(q*e0*esi*nbeff/2))*leff*z/n}

b1    3  1001    v=gammar*((v(13,14)-vfb-v(3,1001))^2)-(vt*(exp((v(3,1001)-(2*phif))/vt)))
b2   13  1001    v=gammar*((v(3,14)-vfb-v(13,1001))^2)-(vt*(exp((v(13,1001)-v(211,14)-(2*phif))/vt)))

c11  1  3  coxn
c21  1  4  coxn
c31  1  5  coxn
c41  1  6  coxn
c51  1  7  coxn
c61  1  8  coxn
c71  1  9  coxn
c81  1 10  coxn
c91  1 11  coxn
c101 1 12  coxn

bv1  15 1001 v=sqrt(v(3))
bv2  16 1001 v=sqrt(v(4))
bv3  17 1001 v=sqrt(v(5))
bv4  18 1001 v=sqrt(v(6))
bv5  19 1001 v=sqrt(v(7))
bv6  20 1001 v=sqrt(v(8))
bv7  21 1001 v=sqrt(v(9))
bv8  22 1001 v=sqrt(v(10))
bv9  23 1001 v=sqrt(v(11))
bv10 24 1001 v=sqrt(v(12))

c1   3  14 cn/bv1
c2   4  14 cn/bv2
c3   5  14 cn/bv3
c4   6  14 cn/bv4
c5   7  14 cn/bv5
c6   8  14 cn/bv6
c7   9  14 cn/bv7
c8  10  14 cn/bv8
c9  11  14 cn/bv9
c10 12  14 cn/bv10

xvr     3  4	1000  1001  VC_RES1
xvr1    4  5	1000  1001  VC_RES1
xvr2    5  6	1000  1001  VC_RES1
xvr3    6  7	1000  1001  VC_RES1
xvr4    7  8	1000  1001  VC_RES1
xvr5    8  9  	1000  1001  VC_RES1
xvr6    9 10 	1000  1001  VC_RES1
xvr7   10 11	1000  1001  VC_RES1
xvr8   11 12	1000  1001  VC_RES1
xvr9   12 13	1000  1001  VC_RES1
.ENDS VC_MOSFET


.SUBCKT VC_RES1	500 600	900 800
.param nbeff=8E+29u;
.param tox=6E-3u;
.param e0=8.85E-6u;
.param esi=12.1104E+6u;
.param q=1.6E-13u;
.param eox=2.1025E+6u;
.param gamma0={(tox/(eox*e0))*((2*e0*esi*q*nbeff)^0.5)}
.param vfb=-0.42E+6u;
.param dibll=0.00118E+6u;
.param dible=-2.574E+6u;
.param vfbll=0.134E+6u;
.param vfble=-0.79E+6u;
.param csll=-0.0615E+6u;
.param csle=0.801E+6u;
.param leff=2.5u;
.param vfbm={vfb+((vfbll)*(leff)^vfble)}
.param gamma={gamma0*exp((csll)*(leff)^csle)}
.param vt=26E+3u;
.param ni=8.3E+21u;
.param phif={vt*log(nbeff/ni)}
.param vtr={1/vt}
.param gammar={1/(gamma0)^2}
.param alpha=0.07E+6u;
.param beta0=1.109E+6u;
.param z=2u;
.param miodop=541E+2u;
.param vsat=1.23E+11u;
.param n=10;
.param wk={leff/n}
.param cox={eox*e0/tox}
.param a1=alpha
.param a2={(miodop/(wk*vsat))^beta0}
.param a3=beta0
.param a4={((z*miodop)/wk)}
.param a5=cox
.param a6={sqrt(2*q*e0*esi*nbeff)}
.param coxn={(cox*leff*z)/n}
.param cn={(sqrt(q*e0*esi*nbeff/2))*leff*z/n}
*BRES2	500	700	V=I(Vsense)*((1+(a1*(v(900,800)-v(500))))+((1+(a2*((v(600,500))^(a3))))^(1/a3)))/((a4*abs(a5*(v(900,800)-v(500))))-(a6*(v(500))))	
BRES2	500	700	V=I(VSENSE)*(1)/(a4*abs(a5*(v(900,800)-v(500))))
VSENSE 700	600	0
.ENDS