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from the model file, for nominal process corner, the specified values are as follows
parameter NMOS PMOS
tox 1.39e-8m 1.39e-8m
Cox(from tox) 2.484e-3F/m^2 2.484e-3F/m^2
un 458.43e-4m^2/Vs 212.02e-4m^2/Vs
Kn/Kp(=uncox) 113.88uA/V^2 52.66uA/V^2
This is just to start of hand calculations. As paulux mentioned, simulating a single transistor gives exact values of required parameters.