Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

[moved] Why forming gas contains nitrogen?

Status
Not open for further replies.

alyast

Newbie level 3
Newbie level 3
Joined
Dec 16, 2011
Messages
3
Helped
0
Reputation
0
Reaction score
0
Trophy points
1,281
Activity points
1,301
I know that forming gas anneal leads to passivation of dangling bond on SiO2/Si interface. Forming gas contains 95% of nitrogen and 5% of hydrogen. Why not 100% of hydrogen. I heard that nitrogen is fairly intert but doesn't it will form oxynitride when in contact with silicon oxide at anneal temperatures?
 

doesn't it will form oxynitride when in contact with silicon oxide at anneal temperatures?
Unlikely.

A trivial reason not to use hydrogen might be that all possible mixtures with air should be non-incendive. So no safety measures are required.
 

Status
Not open for further replies.

Similar threads

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top