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[moved] Why forming gas contains nitrogen?

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alyast

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I know that forming gas anneal leads to passivation of dangling bond on SiO2/Si interface. Forming gas contains 95% of nitrogen and 5% of hydrogen. Why not 100% of hydrogen. I heard that nitrogen is fairly intert but doesn't it will form oxynitride when in contact with silicon oxide at anneal temperatures?
 

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doesn't it will form oxynitride when in contact with silicon oxide at anneal temperatures?
Unlikely.

A trivial reason not to use hydrogen might be that all possible mixtures with air should be non-incendive. So no safety measures are required.
 

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