FDSOI technology provides us both flip well and conventional well device . Can any one explain me when to use conventional well and when to use flip well device?
I have no idea what your foundry means by "flip well"
specifically, but if you were to swap Nwell for Pwell on
a NMOS transistor you'd end up with a depletion mode
FET, which has some applications (for example, a
normally-on RF switch, cascode "infinite height" self
biasing stacks, on-chip LDOs, ....
If true, then "well" means something different to you
and your foundry, than most CMOS people. I'd want a
foundry's device cross-section before believing you.