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[MOVED] CMOS VLSI Design. Threshold of CMOS regarding.

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Prashanth.vinnakota

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Is there any dependence of Vth (CMOS inverter) on Temperature in 180nm technology?
If so wat relation can be given between µn and µp?
 

Prashanth.vinnakota

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Re: CMOS VLSI Design. Threshold of CMOS regarding.

The threshold of CMOS inverter is dependent on mobilities of electrons and holes.

In that aspect it is clear there is a dependence on temperature because the carrier mobility is dependent on temperature.

So what i ask is how that dependence is in 180nm standard technology?
 

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Re: CMOS VLSI Design. Threshold of CMOS regarding.

The threshold of CMOS inverter is dependent on mobilities of electrons and holes.
In that aspect it is clear there is a dependence on temperature because the carrier mobility is dependent on temperature.
Below pls. find the theory (Allen/Holberg).

So what i ask is how that dependence is in 180nm standard technology?
For this process size I found TC(Vth) between -1.0 and -1.6 mV/°C :
 

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Prashanth.vinnakota

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Re: CMOS VLSI Design. Threshold of CMOS regarding.

Below pls. find the theory (Allen/Holberg).


For this process size I found TC(Vth) between -1.0 and -1.6 mV/°C :

Sir,
It must be true because i found the threshold of each Inverter deviating slightly from mathematically calculated threshold when i went for designing in Cadence Virtuoso.

Thank you sir.
 

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