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MOSFET parameter determination.

Yashaz91

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Hi everyone,
I recently started working on a new PDK, and the main issue currently hindering my progress is the device parameters. I have worked with BSIM, EKV, and SPICE models before, just a scroll through the model files would give me a rough estimate of the device parameters (Noise figure, VTH0, U0, Tox, and so on) at zero bias conditions.

The new PDK utilizes the PSP model and it is too abstruse, I can't make sense of the parameters as they are represented by equations, those equations by more equations, and so on.

My designs generally start off with a rough estimate of device dimensions and biasing point based on hand calculations and later on move on to simulation based refinement.

Is there an alternate way to estimate these parameters (preferrably simulation based) ?

P.S Gm/ID technique is employable but not preferred.
 

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