#### whoopie

##### Newbie level 1

If I have a NMOS which is diode-connected and operating in the saturation region we can derive the equation for Vgs based from the well-known equation for drain current (ignoring the effects of channel length modulation)

Vgs = Vth + √[(2*Id*L)/(kn*W)]

and if we take its derivative with respect to temperature, we can get the rate of change of Vgs with respect to temperature. Also, since it is diode connected then Vgs=Vds which means that they both have the same rate of change with respect to temperature.

Now the question is: What if it is not diode-connected? Assuming it is still in saturation region, we can still get the rate of change of Vgs with respect to temperature but I can't find a way to determine the rate of change of Vds with respect to temperature. Please help guys.