schottky diode modelling
I am modelling Schottky diode using PN junction diode in ADS.I got Spice model parameters from Agilent's Schottky diode datasheet . By changing N,IS and R I could get my required I-V curve. But ,there is no change in the dynamic resistance of the device ,when RF power signal is applied to it.
Please help me to solve my problem.
1.Which parameter change affects the dynamic resistance?
2.What Should I change in the model to have effect on dynamic resistance with change in RF signal?
3.How can I know whether the Device is modelled as Schottky diode or not ?
4.What are the modelling steps after I-V curve is obtain, to get dynamic resistance changed?
4.Can the spice model parameters directly be used in ADS or some process is required?