Jan 29, 2017 #1 D dzafar Member level 4 Joined Jan 17, 2017 Messages 76 Helped 1 Reputation 2 Reaction score 1 Trophy points 8 Activity points 690 Why is mismatch in BJT << mismatch in MOS?
Jan 29, 2017 #2 B BradtheRad Super Moderator Staff member Joined Apr 1, 2011 Messages 15,183 Helped 2,900 Reputation 5,812 Reaction score 2,982 Trophy points 1,393 Location Minneapolis, Minnesota, USA Activity points 113,742 Does your question have to do with fabricating devices on a wafer? Adjusting gain of a BJT, vs MOS? Controlling a BJT via current, vs control of MOS via voltage? Mismatch in a current mirror? See the list of related threads at the bottom of this colum.
Does your question have to do with fabricating devices on a wafer? Adjusting gain of a BJT, vs MOS? Controlling a BJT via current, vs control of MOS via voltage? Mismatch in a current mirror? See the list of related threads at the bottom of this colum.
Jan 29, 2017 #3 D dzafar Member level 4 Joined Jan 17, 2017 Messages 76 Helped 1 Reputation 2 Reaction score 1 Trophy points 8 Activity points 690 It is in regards to current mirror. We have a table that compares npn vs pnp and nmos vs pmos current mirrors. A point says: ΔV_BE mismatch in BJTs is much smaller than corresponding ΔV_T mismatch in MOS transistors. I don't understand the reason.
It is in regards to current mirror. We have a table that compares npn vs pnp and nmos vs pmos current mirrors. A point says: ΔV_BE mismatch in BJTs is much smaller than corresponding ΔV_T mismatch in MOS transistors. I don't understand the reason.