gafsos
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CK815 said:The above reasons are correct. Metal over poly carrying high currents might capacitively couple charge into a gate and affect the behaviour of a device. Also, Metal and poly can create parasitic devices when routed over wells.
One other reason not to route metal over poly on MOS transistors is that during etching of the metal, charged particles and residuals could remain on the dielectric near the remaining metal line. These charged residuals can unexpectedly change the behaviour, especially Vth, of a MOS transistor.
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