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Medium-VT NMOS and deep-N-Well in TSMC Process?

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weber_8722

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Hi,

I wonder if the medium-VT NMOS can be put in a deep-N-Well in TSMC180nm MS/RF process? That would help in some situations. Does anybedoy has another idea of making a good source-follower buffer with little voltage shift and gain close to unity?:p

Bye Stephan
 

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